• DocumentCode
    1923175
  • Title

    Temperature Dependence of the Hard Breakdown Current of MOS Capacitors

  • Author

    Avellán, Alejandro ; Miranda, Enrique ; Sell, B. ; Schroeder, Dietmar ; Krautschneider, Wolfgang

  • Author_Institution
    Technical University, Hamburg-Harburg, Germany
  • fYear
    2002
  • fDate
    24-26 September 2002
  • Firstpage
    463
  • Lastpage
    466
  • Keywords
    Breakdown voltage; Circuit simulation; Electric breakdown; Electrodes; Low voltage; MOS capacitors; MOS devices; Semiconductor device doping; Substrates; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
  • Print_ISBN
    88-900847-8-2
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2002.194968
  • Filename
    1503898
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1923175