Title :
BiCMOS, a technology for high-speed/high-density ICs
Author :
Klose, H. ; Zehner, B. ; Wieder, A.
Author_Institution :
Siemens AG, Munich, West Germany
Abstract :
A BiCMOS technology for high-speed/high-density circuits for digital and analog functions is described. The features of MOS and bipolar devices are compared. The different aspects of designing a BiCMOS process are described. The advantages of the BiCMOS technology for systems applications are demonstrated. The results clearly show that BiCMOS is the choice for filling the gap between pure CMOS and pure bipolar technology. BiCMOS overcomes the power dissipation and packing density problems of large bipolar circuits and the speed limitation problem of large CMOS circuits. It is shown that the speed advantage of BiCMOS over CMOS is a factor of 4-5 for mixed ECL/CMOS designs and up to a factor of 8 for those analog circuits which require both speed and precision
Keywords :
BIMOS integrated circuits; VLSI; integrated circuit technology; integrated logic circuits; integrated memory circuits; linear integrated circuits; BiCMOS technology; analog circuits; analog functions; digital functions; high-speed/high-density circuits; mixed ECL/CMOS designs; packing density; power dissipation; speed advantage; BiCMOS integrated circuits; CMOS process; CMOS technology; Capacitance; Costs; Delay; Energy consumption; Hip; Voltage; Wiring;
Conference_Titel :
Computer Design: VLSI in Computers and Processors, 1989. ICCD '89. Proceedings., 1989 IEEE International Conference on
Conference_Location :
Cambridge, MA
Print_ISBN :
0-8186-1971-6
DOI :
10.1109/ICCD.1989.63377
