Investigating 50nm Channel Length Vertical MOSFET Containing a Dielectric Pocket, in a Circuit Environment

Author

Donaghy, D. ; Hall, S. ; Kunz, V.D. ; de Groot, C.H. ; Ashburn, P.

Author_Institution

University of Liverpool, United Kingdom

fYear

2002

fDate

24-26 September 2002

Firstpage

499

Lastpage

502

Keywords

Dielectrics; MOSFET circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

Print_ISBN

88-900847-8-2

Type

DOI

10.1109/ESSDERC.2002.194977

Filename

1503907

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