DocumentCode :
1923395
Title :
Full extraction of PHEMT state functions using time domain measurements
Author :
Morgan, D.G. ; Edwards, G.D. ; Phillips, A. ; Tasker, P.J.
Author_Institution :
Cardiff Univ., UK
Volume :
2
fYear :
2001
fDate :
20-24 May 2001
Firstpage :
823
Abstract :
The large signal state functions of the PHEMT, (Pseudomorphic High Electron Mobility Transistor) are fully extracted for the first time using dynamic measurements only. A novel reverse waveform measurement technique combined with forward waveform measurements yield the intrinsic current and charge surfaces, state functions. The new reverse extraction results have been verified to be bias and power level independent and the resultant state functions obtained are confirmed to be unique. The technique provides a direct high frequency curve-tracing tool, and allows for the generation of the parameter surfaces required for dynamic table-based models.
Keywords :
UHF field effect transistors; curve fitting; high electron mobility transistors; microwave field effect transistors; semiconductor device measurement; time-domain analysis; PHEMT state functions; dynamic measurements; dynamic table-based models; forward waveform measurements; high frequency curve-tracing tool; intrinsic charge surfaces; intrinsic current surfaces; parameter surfaces; reverse extraction results; reverse waveform measurement technique; signal state functions; state functions; time domain measurements; Charge measurement; Current measurement; Electron mobility; Frequency; HEMTs; MODFETs; Measurement techniques; PHEMTs; Surface waves; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-6538-0
Type :
conf
DOI :
10.1109/MWSYM.2001.967018
Filename :
967018
Link To Document :
بازگشت