DocumentCode
1923423
Title
Large-signal look-up table model for InP HEMTs including non-quasi-static and impact ionisation effects
Author
Schreurs, D. ; Orzati, A. ; Pergola, L. ; Benedickter, H. ; Homan, O. ; Bachtold, W.
Author_Institution
Div. ESAT-TELEMIC, Katholieke Univ., Leuven, Belgium
Volume
2
fYear
2001
fDate
20-24 May 2001
Firstpage
827
Abstract
We developed an efficient method to determine a large-signal look-up table model for InP HEMTs. By performing the measurements on a logarithmic frequency scale, we have a high resolution at lower frequencies to accurately characterise impact ionisation, and sufficient data points at millimetre wave frequencies to extract the non-quasi-static parameters.
Keywords
III-V semiconductors; high electron mobility transistors; impact ionisation; indium compounds; millimetre wave field effect transistors; semiconductor device models; HEMTs; InP; impact ionisation effects; large-signal look-up table model; logarithmic frequency scale; millimetre wave frequencies; non-quasi-static effects; Capacitance; Circuits; Gallium arsenide; HEMTs; Impact ionization; Indium phosphide; MODFETs; Microwave frequencies; Microwave technology; Table lookup;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location
Phoenix, AZ, USA
ISSN
0149-645X
Print_ISBN
0-7803-6538-0
Type
conf
DOI
10.1109/MWSYM.2001.967019
Filename
967019
Link To Document