مرکز منطقه ای اطلاع رساني علوم و فناوري - New Mechanism of Body Charging in Partially Depleted SOI-MOSFETs with Ultra-thin Gate Oxides

DocumentCode :

1923426

Title :

New Mechanism of Body Charging in Partially Depleted SOI-MOSFETs with Ultra-thin Gate Oxides

Author :

Pretet, J. ; Matsumoto, T. ; Poiroux, T. ; Cristoloveanu, S. ; Gwoziecki, R. ; Raynaud, C. ; Roveda, A. ; Brut, H.

Author_Institution :

STMicroelectronics, France and IMEP, France

fYear :

2002

fDate :

24-26 September 2002

Firstpage :

515

Lastpage :

518

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

Print_ISBN :

88-900847-8-2

Type :

conf

DOI :

10.1109/ESSDERC.2002.194981

Filename :

1503911

Link To Document :