Title :
Nonlinear noise modeling of a PHEMT device through residual phase noise and low frequency noise measurements
Author :
Llopis, O. ; Juraver, J.B. ; Tamen, B. ; Danneville, F. ; Chaubet, M. ; Cappy, A. ; Graffeuil, J.
Author_Institution :
Lab. d´Autom. et d´Anal. des Syst., CNRS, Toulouse, France
Abstract :
The phase noise generated by a FET device is investigated using transmission and reflection residual phase noise measurements. This approach helps in locating, in the intrinsic device, the low frequency noise sources which are responsible for these phase fluctuations. On the basis of these experiments, a new nonlinear noise model of the FET is proposed. This model is able to describe a phenomenon that has been observed, but never modeled in the past: the dependence of the baseband noise on the microwave input power.
Keywords :
high electron mobility transistors; microwave field effect transistors; phase noise; semiconductor device measurement; semiconductor device models; semiconductor device noise; PHEMT device; baseband noise; low frequency noise measurements; low frequency noise sources; microwave input power; nonlinear noise modeling; phase fluctuations; residual phase noise; Current measurement; Fluctuations; Frequency; Low-frequency noise; Microwave devices; Microwave oscillators; Noise measurement; PHEMTs; Phase measurement; Phase noise;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967021
