Nonlinear noise modeling of a PHEMT device through residual phase noise and low frequency noise measurements

Author

Llopis, O. ; Juraver, J.B. ; Tamen, B. ; Danneville, F. ; Chaubet, M. ; Cappy, A. ; Graffeuil, J.

Author_Institution

Lab. d´Autom. et d´Anal. des Syst., CNRS, Toulouse, France

Volume

2

fYear

2001

fDate

20-24 May 2001

Firstpage

831

Abstract

The phase noise generated by a FET device is investigated using transmission and reflection residual phase noise measurements. This approach helps in locating, in the intrinsic device, the low frequency noise sources which are responsible for these phase fluctuations. On the basis of these experiments, a new nonlinear noise model of the FET is proposed. This model is able to describe a phenomenon that has been observed, but never modeled in the past: the dependence of the baseband noise on the microwave input power.

Keywords

high electron mobility transistors; microwave field effect transistors; phase noise; semiconductor device measurement; semiconductor device models; semiconductor device noise; PHEMT device; baseband noise; low frequency noise measurements; low frequency noise sources; microwave input power; nonlinear noise modeling; phase fluctuations; residual phase noise; Current measurement; Fluctuations; Frequency; Low-frequency noise; Microwave devices; Microwave oscillators; Noise measurement; PHEMTs; Phase measurement; Phase noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967021

Filename

967021