DocumentCode
1923837
Title
A 1 W CMOS power amplifier for GSM-1800 with 55% PAE
Author
Fallesen, C. ; Asbeck, P.
Author_Institution
Nokia Denmark, Copenhagen, Denmark
Volume
2
fYear
2001
fDate
20-24 May 2001
Firstpage
911
Abstract
Until recently it was the common opinion that CMOS RF power amplifiers were not feasible for mobile handsets. This paper presents a CMOS power amplifier for the GSM-1800 standard, with only two external matching components and a few decoupling capacitors. The performance of the power amplifier is better than any other CMOS power amplifier reported and comparable to commercially available power amplifiers in other technologies.
Keywords
CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; cellular radio; power integrated circuits; telephone sets; transceivers; 0.35 micron; 1 W; 1 to 3.4 V; 1710 to 1785 MHz; 55 percent; CMOS power amplifier; GSM-1800 standard; RF power amplifiers; decoupling capacitors; external matching components; mobile handsets; Breakdown voltage; CMOS process; Capacitors; Costs; High power amplifiers; Mobile handsets; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location
Phoenix, AZ, USA
ISSN
0149-645X
Print_ISBN
0-7803-6538-0
Type
conf
DOI
10.1109/MWSYM.2001.967039
Filename
967039
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