Two temperature sensors realized in BiCMOS technology

Author

Filanovsky, I.M.

Author_Institution

Alberta Univ., Edmonton, Alta., Canada

Volume

6

fYear

1998

fDate

31 May-3 Jun 1998

Firstpage

621

Abstract

The first sensor uses, as a temperature sensitive element, a threshold extractor circuit. The output of this circuit provides the p-channel transistor threshold voltage that linearly changes with temperature. The second sensor uses a bridge that includes polysilicon and base-diffused resistors. A one-stage operational amplifier amplifies the output voltage of the sensors. The temperature simulation of the sensor circuits shows that the circuit with extractor has a more linear temperature characteristic than the circuit with the bridge

Keywords

BiCMOS analogue integrated circuits; bridge circuits; operational amplifiers; temperature sensors; BiCMOS technology; base-diffused resistors; linear temperature characteristic; one-stage operational amplifier; p-channel transistor threshold voltage; polysilicon resistors; temperature sensitive element; temperature sensors; temperature simulation; threshold extractor; BiCMOS integrated circuits; Bridge circuits; Circuit simulation; Equations; Integrated circuit technology; Sensor phenomena and characterization; Temperature measurement; Temperature sensors; Thermal sensors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-4455-3

Type

conf

DOI

10.1109/ISCAS.1998.705351

Filename

705351