A single supply high performance PA MMIC for GSM handsets using quasi-enhancement mode PHEMT

Author

Abey, W. ; Moriuchi, T. ; Hajji, R. ; Nakamura, T. ; Nonaka, Y. ; Mitani, E. ; Kennan, W. ; Dang, H.

Author_Institution

Fujitsu Compound Semicond. Inc., San Jose, CA, USA

Volume

2

fYear

2001

fDate

20-24 May 2001

Firstpage

923

Abstract

A 3-stage GaAs FET power amplifier MMIC utilizing a quasi-enhancement mode PHEMT process has been developed for single supply GSM applications. The MMIC operates from a 3.2 V power supply and at 900 MHz, provides 35.5 dBm output power and 63.0% power added efficiency. Another 3 stage MMIC designed for DCS-1800, which at 1750 MHz provides 33.2 dBm output power with 61.1% PAE, is also presented.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; cellular radio; field effect MMIC; gallium arsenide; telephone sets; transceivers; 1750 MHz; 3.2 V; 61.1 percent; 63 percent; 900 MHz; DCS-1800 application; GSM handsets; GaAs; GaAs FET MMIC; high performance amplifier; power amplifier MMIC; pseudomorphic HEMT; quasi-enhancement mode PHEMT process; single supply power amplifier; three-stage power amplifier; FETs; GSM; Gain; Low voltage; MMICs; PHEMTs; Power amplifiers; Power generation; Power supplies; Telephone sets;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967042

Filename

967042