• DocumentCode
    1924523
  • Title

    An Approach for Pre-Silicon Power Modeling

  • Author

    Agrawal, Prashant ; Ramakrishna, Sudhir ; Oke, Ajit N. ; Vijay, Saurabh

  • Author_Institution
    CSE, Indian Inst. of Technol., Kharagpur
  • fYear
    2007
  • fDate
    5-7 March 2007
  • Firstpage
    99
  • Lastpage
    103
  • Abstract
    Accurate estimation of power in pre-silicon is very important and finally to validate this against post-silicon measurement is essential throughout product lifecycle. Thermal design power (TDP) estimates are used to design package thermal solutions. In this paper a modeling approach for dynamic power estimation under TDP conditions is proposed. In this approach, separate models are built for each partition in the design. The model uses only bandwidth and the effective toggle rate of the input data for estimating the total switched capacitance and dynamic power. The model takes into account the effect of cross-coupling capacitance on dynamic power. The results obtained from the model are within 7% of the measured data
  • Keywords
    integrated circuit design; integrated circuit modelling; integrated circuit packaging; thermal management (packaging); dynamic power estimation; post-silicon measurement; pre-silicon power modeling; product lifecycle; switched capacitance; thermal design power; thermal package design; Bandwidth; Batteries; Capacitance; Circuit simulation; Cooling; Packaging; Power dissipation; Power system modeling; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computing: Theory and Applications, 2007. ICCTA '07. International Conference on
  • Conference_Location
    Kolkata
  • Print_ISBN
    0-7695-2770-1
  • Type

    conf

  • DOI
    10.1109/ICCTA.2007.26
  • Filename
    4127350