Chip Design of an UWB, High Gain and Low Noise Amplifier for Wireless Applications

Author

Huang, Jhin-Fang ; Hsu, Ming-Chun ; Wen, Jiun-Yu ; Liu, Ron-Yi

Author_Institution

Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan

fYear

2011

fDate

18-20 April 2011

Firstpage

234

Lastpage

237

Abstract

An ultra-wideband (UWB), high gain and low-noise amplifier (LNA) for wireless applications is presented in this paper. Operating at the frequency band of 0.8-6.0 GHz and fabricated in TSMC 0.18-um technology, the measured results show the gain of 17-19 dB, the noise figure (NF) less than 4.8 dB, the input third-order intercept point (IIP3) of -17 dBm, the reverse isolation less than -25 dB and the power dissipation of 43.2 mW at 1.8 V voltage supply. The chip area including pads is only 1.027mm2.

Keywords

low noise amplifiers; microwave amplifiers; ultra wideband communication; IIP3; TSMC; UWB; chip design; frequency 0.8 GHz to 6.0 GHz; high gain amplifier; input third-order intercept point; low noise amplifier; noise figure; power 43.2 mW; size 0.18 mum; voltage 1.8 V; wireless applications; Bandwidth; CMOS integrated circuits; Gain; Impedance matching; Noise measurement; RLC circuits; Semiconductor device measurement; LNA; UWB; high gain; low-noise amplifier; ultra-wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications and Mobile Computing (CMC), 2011 Third International Conference on

Conference_Location

Qingdao

Print_ISBN

978-1-61284-312-4

Type

conf

DOI

10.1109/CMC.2011.83

Filename

5931179