Title :
A 6 GHz, 50 watt low distortion push-pull GaAs power FET optimized for 12 V class A-B operation
Author :
Yamamoto, T. ; Sano, S. ; Naito, K. ; Igarashi, T. ; Fukaya, J.
Author_Institution :
Fujitsu Quantum Devices Ltd., Yamanashi, Japan
Abstract :
A low distortion 50 Watt push-pull quasi E-mode GaAs FET for 6 GHz terrestrial and satellite communication applications has been developed. The push-pull FET, which operates at drain voltage (V/sub ds/) of 12 V, class A-B, has a saturated output power (P/sub sat/) of 47 dBm (50 W) and a linear gain (G/sub L/) Of 10 dB in the frequency range of 5.8 to 6.5 GHz. A third order intermodulation distortion (IM/sub 3/) and an associated power-added efficiency (PAE) at 41 dBm output power of -35 dBc and 18% respectively. As compared with conventional single-ended D-mode FET, it has an IM/sub 3/ and PAE improvement of 5 dB and 5% respectively.
Keywords :
III-V semiconductors; gallium arsenide; intermodulation distortion; microwave field effect transistors; microwave power transistors; power MESFET; 10 dB; 12 V; 18 percent; 5.8 to 6.5 GHz; 50 W; GaAs; IM/sub 3/; PAE; Schottky layers; class A-B operation; distortion; drain voltage; frequency range; linear gain; output power; power-added efficiency; push-pull power FET; quasi E-mode; satellite communication applications; saturated output power; terrestrial communication applications; third order intermodulation distortion; Circuits; FETs; Gallium arsenide; Gold; Impedance matching; Power generation; Power transmission lines; Radio link; Synchronous digital hierarchy; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967073
