Title :
Review of compound semiconductor devices for RF power applications
Author_Institution :
Semicond. Device Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
The progress of RF power devices based on compound semiconductor materials (represented here by GaAs) are reviewed. Two major applications of those devices are handy terminals and base stations. The highest power-added-efficiency is the major concern for the mobile terminals, while the latter requires high power transmitting capability with sufficient linearity. Compound semiconductor devices are suited for those applications. This paper reviews recent developments in these RF power devices.
Keywords :
III-V semiconductors; cellular radio; gallium arsenide; power field effect transistors; telephone sets; GaAs; GaAs power FET; RF power applications; RF power devices; base stations; compound semiconductor devices; compound semiconductor materials; handy terminals; linearity; mobile terminals; power transmitting capability; power-added-efficiency; review; Base stations; Electron mobility; FETs; Gallium arsenide; Photonic band gap; Radio frequency; Semiconductor devices; Semiconductor materials; Silicon; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016161
