DocumentCode
1925034
Title
Collimation, The Solution to Push Standard Ti-TiN PVD to 0.35μm Technology
Author
Lerme, M. ; Ulmer, L. ; Morand, Y. ; Van De Goor, A. ; Le Contellec, M. ; Normandon, P. ; Gayet, P.
Author_Institution
GRESSI-LETI DMEL-CENG, 17 rue des Martyrs 38054 GRENOBLE Cedex 9 France
fYear
1995
fDate
25-27 Sept. 1995
Firstpage
127
Lastpage
130
Abstract
This paper reports the results obtaines with a collimated PVD Ti/TiN barrier layer used for contacts on TiSi2 in a 0.35μm technology. The collimated process is compared with the standard PVD one, in terms of electrical performances measured on CMOS wafers. The influence of an anneal after the baffler deposition is also studied. We have shown that the collimated process, contrary to the standard one, is able to meet the requirements of a 0.35 μm technology. A RTP treatment performed after the barrier deposition is needed to achieve low contact resistances and good yields measured on contacts strings.
Keywords
Annealing; Atherosclerosis; CMOS process; CMOS technology; Collimators; Contacts; Electric variables measurement; Measurement standards; Performance evaluation; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location
The Hague, The Netherlands
Print_ISBN
286332182X
Type
conf
Filename
5435991
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