Collimation, The Solution to Push Standard Ti-TiN PVD to 0.35μm Technology

This paper reports the results obtaines with a collimated PVD Ti/TiN barrier layer used for contacts on TiSi2 in a 0.35μm technology. The collimated process is compared with the standard PVD one, in terms of electrical performances measured on CMOS wafers. The influence of an anneal after the baffler deposition is also studied. We have shown that the collimated process, contrary to the standard one, is able to meet the requirements of a 0.35 μm technology. A RTP treatment performed after the barrier deposition is needed to achieve low contact resistances and good yields measured on contacts strings.