DocumentCode
1925056
Title
10 kV power semiconductors - breakthrough for 6.9 kV medium voltage drives
Author
Weber, A. ; Eicher, S.
Author_Institution
ABB Switzerland Ltd., Lenzburg, Switzerland
fYear
2002
fDate
2002
Firstpage
45
Lastpage
48
Abstract
Requirements on semiconductor ratings and characteristics are established based on demands of voltage and current source inverters. Fundamental parameters such as blocking characteristics and safe operating area have been measured on 10 kV pin diodes and IGBTs and IGCTs for 4 kV DC link voltage to estimate the potential of these devices in the application.
Keywords
electric drives; insulated gate bipolar transistors; invertors; p-i-n diodes; power semiconductor devices; 10 kV; 4 kV; 6.9 kV; DC link voltage; IGBTs; IGCTs; blocking characteristics; current source inverters; high voltage semiconductor; medium voltage drives; pin diodes; power semiconductors; safe operating area; semiconductor ratings; voltage source inverters; Area measurement; Conductivity; Costs; Insulated gate bipolar transistors; Inverters; Medium voltage; Power generation; Semiconductor diodes; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN
0-7803-7318-9
Type
conf
DOI
10.1109/ISPSD.2002.1016167
Filename
1016167
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