Title :
Hybrid all-SiC MOS-gated bipolar transistor (MGT)
Author :
Tang, Yi ; Banerjee, Sujit ; Chow, T. Paul
Author_Institution :
Center for Power Electron. Syst., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
A MOS-gated bipolar transistor structure (called MGT), which consists of a MOSFET driving an npn bipolar junction transistor in a Darlington configuration, is experimentally demonstrated in SiC in hybrid form with a 6H-SiC lateral RESURF MOSFET driving high-voltage 4H-SiC implanted-emitter BJT. SiC MGT has several advantages over SiC IGBT, such as wider Safe Operation Area (SOA) as well as faster switching. The hybrid transistor has a forward drop of 5 V at 50 A/cm2 and rise and fall times of 0.8 μs and 2.5 μs, respectively.
Keywords :
power transistors; semiconductor device models; silicon compounds; wide band gap semiconductors; 0.8 mus; 2.5 mus; 5 V; Darlington configuration; MGT; MOS-gated bipolar transistor; SiC; fall times; forward drop; hybrid transistor; implanted-emitter BJT; lateral RESURF MOSFET; rise times; safe operation area; switching; Bipolar transistors; Breakdown voltage; Hybrid junctions; Insulated gate bipolar transistors; MOSFET circuits; Power electronics; Semiconductor optical amplifiers; Silicon carbide; Temperature; Threshold voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016169
