DocumentCode
1925098
Title
Characteristics of Inaias/ingaasp Quantum-Well Hemts
Author
Hong, W-P. ; Bhat, R. ; Hayes, J.R. ; Chang, G.K. ; Nguyen, C. ; Koza, M.
Author_Institution
Bellcore, Red Bank, NJ
fYear
1991
fDate
17-19 June 1991
Keywords
HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MISFETs; MODFETs; Photonic band gap; Quantum well devices; Quantum wells; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1991. 49th Annual
Conference_Location
Boulder, CO, USA
Print_ISBN
0-87942-647-0
Type
conf
DOI
10.1109/DRC.1991.664689
Filename
664689
Link To Document