Title :
Maximum switching frequency characterization of 4.5kV–400A SiC-PiN diode and Si-IEGT hybrid pair power module
Author :
Takao, Kazuto ; Wada, Kazuyoshi ; Kyungmin Sung ; Mastuoka, Yuji ; Tanaka, Yuichi ; Nishizawa, Shinichi ; Ota, Chiharu ; Kanai, Teruto ; Shinohe, Takashi ; Ohashi, H.
Author_Institution :
Corp. R&D Center, Toshiba Corp., Kawasaki, Japan
Abstract :
The maximum switching frequency of a 4.5 kV-400 A SiC-PiN diode and Si-IEGT hybrid pair module has been analyzed from the viewpoints of cooling capacity of the hybrid pair module and the minimum pulse width of the PWM signal. In the developed hybrid pair module, a direct water cooling type heat sink is employed to enhance the cooling capacity. It found that the developed 4.5 kV-400 A hybrid pair module could be operate at 10 kHz PWM switching frequency with the peak current of 110 A and the dc voltage of 2.5 kV. In this operating condition, the power losses of the Si-IEGT and SiC-PiN diode in the hybrid pair module are 2380W and 100 W, respectively.
Keywords :
PWM power convertors; elemental semiconductors; heat sinks; modules; p-i-n diodes; power field effect transistors; silicon; silicon compounds; wide band gap semiconductors; PWM signal; PWM switching frequency; Si; Si-IEGT hybrid pair power module; SiC; SiC-PiN diode; cooling capacity; current 400 A; direct water cooling type heat sink; frequency 10 kHz; hybrid pair module; maximum switching frequency characterization; power 100 W; power 2380 W; power losses; voltage 2.5 kV; voltage 4.5 kV; Cooling; Logic gates; Resistance; Silicon; Switches; Switching frequency; Water heating;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2013 IEEE
Conference_Location :
Denver, CO
DOI :
10.1109/ECCE.2013.6646892
