Experimental evaluation of 10kHz switching operation of 4.5kV–400A SiC-PiN diode and Si-IEGT hybrid pair module

Author

Takao, Kazuto ; Wada, Kazuyoshi ; Kyungmin Sung ; Mastuoka, Yuji ; Tanaka, Yuichi ; Nishizawa, Shinichi ; Ota, Chiharu ; Kanai, Teruto ; Shinohe, Takashi ; Ohashi, H.

Author_Institution

Corp. R&D Center, Toshiba Corp., Kawasaki, Japan

fYear

2013

fDate

15-19 Sept. 2013

Firstpage

1577

Lastpage

1583

Abstract

Possibility of a 10 kHz switching frequency operation of a 4.5kV-400A SiC-PiN diode and Si-IEGT hybrid pair module has been investigated to drastically increase the switching frequency of medium-voltage power converters. For this purpose, the relation among the minimum pulsed width of the PWM signal, the modulation index, and the maximum switching frequency is analyzed based on the switching characteristics of the hybrid pair module. The analyzed data show that the 10 kHz switching frequency could be available with the hybrid pair module.

Keywords

PWM power convertors; insulated gate bipolar transistors; p-i-n diodes; power semiconductor devices; silicon compounds; switching convertors; PWM signal; Si-IEGT hybrid pair module; SiC; SiC-PiN diode; current 400 A; frequency 10 kHz; medium-voltage power converter; switching characteristics; switching frequency operation; voltage 4.5 kV; Inverters; Logic gates; Pulse width modulation; Semiconductor diodes; Silicon carbide; Switches; Switching frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2013 IEEE

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/ECCE.2013.6646893

Filename

6646893