• DocumentCode
    1925208
  • Title

    Robust, 1000 V, 130 mΩ-cm2, lateral, two-zone RESURF MOSFETs in 6H-SiC

  • Author

    Banerjee, S. ; Chow, T.P. ; Gutmann, R.J.

  • Author_Institution
    Center for Power Electron. Syst., Rensselaer Polytech. Inst., Troy, NY, USA
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    69
  • Lastpage
    72
  • Abstract
    Silicon carbide lateral power MOSFET is a key building block for high-voltage power integrated circuits in SiC. In this work, we report an experimental demonstration of two-zone, lateral RESURF MOSFET in 6H-SiC with breakdown voltage above 1000 V and specific on-resistance of 130 mΩ-cm2. These MOSFETs exhibit stable, reversible avalanching at the breakdown voltage, which has not been reported in earlier lateral SiC MOSFETs.
  • Keywords
    MOS integrated circuits; avalanche breakdown; power MOSFET; power integrated circuits; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; 1000 V; 6H-SiC; SiC; breakdown voltage; high-voltage power integrated circuits; on-resistance; reversible avalanching; two-zone RESURF MOSFETs; Avalanche breakdown; Breakdown voltage; Dielectric devices; Doping; Electric breakdown; MOSFETs; Power electronics; Robustness; Silicon carbide; Silicon devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
  • Print_ISBN
    0-7803-7318-9
  • Type

    conf

  • DOI
    10.1109/ISPSD.2002.1016173
  • Filename
    1016173
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1925208