• DocumentCode
    1925325
  • Title

    0.33/spl mu/m Millimeter Wave Inp-Channel Hemts with High F/sub T/ and F/sub MAX/

  • Author

    Aina, L. ; Burgess, M. ; Mattingly, M. ; O´Connor, James ; Meerschaert, A. ; Tong, M. ; Ketterson, A. ; Adesida, I.

  • Author_Institution
    Department of Electrical & Computer Engineering, University of Illinois
  • fYear
    1991
  • fDate
    17-19 June 1991
  • Keywords
    Electron mobility; Fabrication; Frequency; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; Microelectronics; Microwave devices; Millimeter wave technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1991. 49th Annual
  • Conference_Location
    Boulder, CO, USA
  • Print_ISBN
    0-87942-647-0
  • Type

    conf

  • DOI
    10.1109/DRC.1991.664690
  • Filename
    664690
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1925325