Title :
MOS varactors with ferroelectric films
Author :
Gevorgian, S. ; Abadei, S. ; Berg, Heikki ; Jacobsson, H.
Author_Institution :
Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
The microwave performance of MOS varactors with additional ferroelectric film (MFOS) is presented. The tunability of MFOS varactors above 20 GHz is more than 10% higher than that of simple MOS varactors, with sufficiently high Q factor. The proposed MFOS varactor has a simple design and is compatible with standard CMOS processes. It may have symmetric C-V curves at rather high tuning voltages and superior performance at millimetre wave frequencies. In experiments varactors are based on NaNbO/sub 3/ films grown on high resistivity silicon substrates.
Keywords :
MOS capacitors; Q-factor; ferroelectric capacitors; ferroelectric thin films; microwave diodes; sodium compounds; tuning; varactors; 10 to 20 GHz; 40 GHz; MFOS varactors; MOS varactors; NaNbO/sub 3/; NaNbO/sub 3/ films; Q factor; Si; ferroelectric films; high resistivity silicon substrates; high tuning voltage; microwave performance; millimetre wave frequencies; standard CMOS process compatibility; symmetric C-V curves; tunability; CMOS process; Capacitance-voltage characteristics; Conductivity; Ferroelectric films; Frequency; Q factor; Semiconductor films; Tuning; Varactors; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967106
