120 V multi RESURF junction barrier Schottky rectifier (MR-JBS)

Author

Kunori, S. ; Kitada, M. ; Shimizu, T. ; Oshima, K. ; Sugai, A.

Author_Institution

R & D Center, Shindengen Electr. Manuf. Co. Ltd., Saitama, Japan

fYear

2002

fDate

2002

Firstpage

97

Lastpage

100

Abstract

In this paper, we report a 120 V multi RESURF junction barrier Schottky rectifier (MR-JBS). For the first time, we fabricated a 120 V MR-JBS with high aspect p-n junction ratio by filling trenches with single crystal Si using epitaxial growth. By balancing the charge of the p and n regions, V_BR=161 V (at I_R=1 mA), V_F=0.69 V (at J_F=200 A/cm²) and J_R=3.3×10^-5 A/cm² (at V_R=120 V) were obtained. Moreover, by optimizing the n-type drift region, V_BR=130 V, V_F=0.62 V and J_R=4×10^-5 A/cm² were obtained. This V_F is 0.17 V lower than conventional 120 V SBDs.

Keywords

Schottky diodes; epitaxial growth; power semiconductor diodes; semiconductor device measurement; semiconductor device models; solid-state rectifiers; 0.62 V; 0.69 V; 1 mA; 120 V; 130 V; 161 V; MR-JBS; SBD; Si; epitaxial growth; high aspect p-n junction ratio; multi RESURF junction barrier Schottky rectifier; n-type drift region; p/n region charge balancing; simulation model; single crystal Si trench filling; DC-DC power converters; Epitaxial growth; Filling; Neodymium; Rectifiers; Schottky barriers; Schottky diodes; Silicon; Telecommunications; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

Print_ISBN

0-7803-7318-9

Type

conf

DOI

10.1109/ISPSD.2002.1016180

Filename

1016180