150-V class superjunction power LDMOS transistor switch on SOI

Author

Amberetu, Mathew A. ; Salama, C. T Andre

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

fYear

2002

fDate

2002

Firstpage

101

Lastpage

104

Abstract

The electrical characteristics of a 150 V class superjunction power LDMOS transistor switch on SOI are compared with those of a conventional SOI RESURF (reduced surface field) LDMOS transistor using simulation. The proposed device has an effective chip area of 0.91 mm×0.91 mm and exhibits a specific on-resistance of 1.65 mΩcm², and a total gate charge of 1.17 nC at V_gs=10 V with a related figure of merit (FOM=Q_g.R_on) of 0.23 Ω.nC.

Keywords

electric charge; electric resistance; field effect transistor switches; power MOSFET; power semiconductor switches; semiconductor device models; silicon-on-insulator; 0.5 A; 0.91 mm; 10 V; 150 V; SOI RESURF LDMOS transistor; SOI structure; Si-SiO₂; device chip area; device figure of merit; device specific on-resistance; device total gate charge; high voltage transistors; reduced surface field transistor; superjunction power LDMOS transistor switch; transistor electrical characteristics simulation; Computational modeling; Computer simulation; Electric variables; Etching; Implants; MOSFET circuits; Power MOSFET; Strontium; Switches; Telecommunication switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

Print_ISBN

0-7803-7318-9

Type

conf

DOI

10.1109/ISPSD.2002.1016181

Filename

1016181