Title :
150-V class superjunction power LDMOS transistor switch on SOI
Author :
Amberetu, Mathew A. ; Salama, C. T Andre
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
The electrical characteristics of a 150 V class superjunction power LDMOS transistor switch on SOI are compared with those of a conventional SOI RESURF (reduced surface field) LDMOS transistor using simulation. The proposed device has an effective chip area of 0.91 mm×0.91 mm and exhibits a specific on-resistance of 1.65 mΩcm2, and a total gate charge of 1.17 nC at Vgs=10 V with a related figure of merit (FOM=Qg.Ron) of 0.23 Ω.nC.
Keywords :
electric charge; electric resistance; field effect transistor switches; power MOSFET; power semiconductor switches; semiconductor device models; silicon-on-insulator; 0.5 A; 0.91 mm; 10 V; 150 V; SOI RESURF LDMOS transistor; SOI structure; Si-SiO2; device chip area; device figure of merit; device specific on-resistance; device total gate charge; high voltage transistors; reduced surface field transistor; superjunction power LDMOS transistor switch; transistor electrical characteristics simulation; Computational modeling; Computer simulation; Electric variables; Etching; Implants; MOSFET circuits; Power MOSFET; Strontium; Switches; Telecommunication switching;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016181
