750 A, 75 V MOSFET power module with sub-nH inductance

In order to reduce the size and the costs of an inverter, the difference between the maximum DC voltage in that application and the blocking voltage of the transistors has to be made as low as possible. This however depends on the reduction of the inductivity between the plus and minus terminals, because this parasitic inductance causes over-voltage spikes during MOSFET turn off. This paper shows the design of a MOSFET power module with a measured inductivity of 0.83 nH. The "state of the art" value is 20 nH. This reduction could only be achieved with a radically different packaging and integration approach.