DocumentCode
1925507
Title
Capacitance measurements on silicon microstrip detectors
Author
Masciocchi, S. ; Peisert, A. ; Ronnqvist, C. ; Vite, D.
Author_Institution
INFN, Milano, Italy
fYear
1992
fDate
25-31 Oct 1992
Abstract
Summary form only. Load capacitance is the most significant parameter determining the noise level of readout electronics. In the case of silicon microstrip detectors, it is represented by the capacitance of one strip to all the adjacent strips. Measurements of this capacitance on the p- and n-side of detectors with various geometries have been performed. Double-sided detectors with a second metal layer and different readout patterns were also studied
Keywords
capacitance measurement; position sensitive particle detectors; semiconductor counters; Si microstrip detector; double sided; load capacitance; Capacitance measurement; Detectors; Educational institutions; Geometry; Microstrip; Noise level; Readout electronics; Silicon; Strips;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-0884-0
Type
conf
DOI
10.1109/NSSMIC.1992.301108
Filename
301108
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