Title :
Capacitance measurements on silicon microstrip detectors
Author :
Masciocchi, S. ; Peisert, A. ; Ronnqvist, C. ; Vite, D.
Author_Institution :
INFN, Milano, Italy
Abstract :
Summary form only. Load capacitance is the most significant parameter determining the noise level of readout electronics. In the case of silicon microstrip detectors, it is represented by the capacitance of one strip to all the adjacent strips. Measurements of this capacitance on the p- and n-side of detectors with various geometries have been performed. Double-sided detectors with a second metal layer and different readout patterns were also studied
Keywords :
capacitance measurement; position sensitive particle detectors; semiconductor counters; Si microstrip detector; double sided; load capacitance; Capacitance measurement; Detectors; Educational institutions; Geometry; Microstrip; Noise level; Readout electronics; Silicon; Strips;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-0884-0
DOI :
10.1109/NSSMIC.1992.301108
