A thin-layer high-voltage silicon-on-insulator hybrid LDMOS/LIGBT device

Author

Petruzzello, J. ; Letavic, T. ; van Zwol, H. ; Simpson, M. ; Mukherjee, S.

Author_Institution

Philips Res. USA, Briarcliff Manor, NY, USA

fYear

2002

fDate

2002

Firstpage

117

Lastpage

120

Abstract

We present a new lateral high-voltage silicon-on-insulator (SOI) power device structure which is a hybrid combination of bipolar and unipolar current flow segments. The hybrid LDMOS/LIGBT device shows a substantial performance advantage over LDMOS due to voltage-dependent conductivity-modulation and a resultant increase in maximum source-follower current capability. When fabricated in an integrated SOI process flow, the LDMOS/LIGBT hybrid device reduces the power device area by 25-50% for many applications, resulting in cost-effective integration and miniaturization of power conversion systems that use a half-bridge topology.

Keywords

bridge circuits; insulated gate bipolar transistors; power MOSFET; power convertors; power integrated circuits; silicon-on-insulator; bipolar current flow; half-bridge topology; high-voltage silicon-on-insulator device; hybrid LDMOS/LIGBT device; maximum source follower current capability; power conversion systems; power device area; unipolar current flow; voltage-dependent conductivity modulation; Bridge circuits; Charge carrier processes; Circuit topology; Displays; Power conversion; Power transistors; Semiconductor diodes; Silicon on insulator technology; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

Print_ISBN

0-7803-7318-9

Type

conf

DOI

10.1109/ISPSD.2002.1016185

Filename

1016185