Power loss and thermal characterization of IGBT modules in the Alternate Arm converter

Power losses in high power HVDC converters are dominated by those that occur within the power electronic devices. This power loss is dissipated as heat at the junction of semiconductor devices. The cooling system ensures that the generated heat is evacuated outside the converter station but temperature management remains critical for the lifetime of the semiconductor devices. This paper presents the results of a study on the temperature profile of the different switches inside a multilevel converter. The steady state junction temperatures are observed through the simulation of a 20 MW Alternate Arm Converter using 1.2kA 3.3 kV IGBT modules. A comparison of the Alternate Arm Converter is made against the case of both the half-bridge and full-bridge Modular Multilevel Converter topologies. Furthermore, the concept of varying the duty-cycle of the two alternative zero-voltage states of the H-bridge modules is introduced. Simulation results demonstrate that it can change the balance of electrical and thermal stress between the two top switches and the two bottom switches of a full-bridge cell.