Interstrip capacitance of the double sided silicon strip detector

The capacitance properties of silicon strip detectors were examined with specially designed strip patterns. The capacitance of sample devices were measured before and after exposure to γ-rays to test the radiation hardness. Only the junction side capacitance was measured. The capacitance on this side has a simple dependency on the strip pattern geometry. The interstrip capacitance makes a greater contribution to the total capacitance than the backplane capacitance. It is found that the reduction of the strip width seems to be suitable for reducing the interstrip capacitance. In the case of the given desired pitch, this means that the largest gap width is preferable. The effect of the radiation exposure on the capacitance is not significantly high. This means that the signal-to-noise ratio should not deteriorate much during the operation