Title :
Signal readout in a-Si:H pixel detectors
Author :
Cho, G. ; Drewery, J.S. ; Hong, W. ; Jing, T. ; Lee, Hongseok ; Kaplan, S.N. ; Mireshghi, A. ; Perez-Mendez, V. ; Wildermuth, D.
Author_Institution :
Lawrence Berkeley Lab., CA, USA
Abstract :
Summary form only. Amorphous or poly-silicon thin-film technology can be used to make readout electronics for a-Si:H pixel detectors. A switch consisting of two a-Si:H p-i-n diodes was studied to read out signals from pixels for imaging of X-rays or gamma rays. A charge storage time of ~20 ms and a readout time of 0.7 μs were achieved. In detection of single ionizing particles, a poly-silicon thin-film amplifier can be integrated to amplify the small signal at pixel level before readout. Prototype poly-silicon TFT (thin-film transistor) amplifiers were designed and fabricated. The measured gain-bandwidth product was ~300 MHz and the input equivalent noise charge was ~1000 electrons for a 1 μs shaping time
Keywords :
X-ray detection and measurement; gamma-ray detection and measurement; p-i-n diodes; pulse amplifiers; semiconductor counters; 0.7 mus; 20 ms; Si:H; X-rays; a-Si:H pixel detectors; amplifiers; charge storage time; gain-bandwidth; gamma rays; input equivalent noise charge; p-i-n diodes; poly-silicon; readout time; signal readout; single ionizing particles; thin-film transistor; Amorphous materials; Detectors; Gamma rays; Optical imaging; P-i-n diodes; Pixel; Readout electronics; Switches; Thin film transistors; X-rays;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-0884-0
DOI :
10.1109/NSSMIC.1992.301118
