Investigations on the stability of dynamic avalanche in IGBTs

Author

Rose, Petra ; Silber, Dieter ; Porst, Alfred ; Pfirsch, Frank

Author_Institution

Bremen Univ., Germany

fYear

2002

fDate

2002

Firstpage

165

Lastpage

168

Abstract

Simulation studies on dynamic avalanche exhibit self-extinguishing current filaments which move across the device. In spite of high current densities, there is no indication for subsequent latching. High power densities will probably result in high local transient temperatures and device failure. The benefit of prolonged channel current during turn-off is obviously due to suppression of current filaments.

Keywords

avalanche breakdown; current density; insulated gate bipolar transistors; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; thermal stability; IGBT dynamic avalanche stability investigations; current filament suppression; device current filament movement; device failure; device latching; dynamic avalanche simulation studies; high current densities; high power densities; local transient temperatures; self-extinguishing current filaments; turn-off prolonged channel current; Charge carrier processes; Current density; Diodes; Insulated gate bipolar transistors; Isothermal processes; Plasma temperature; Resistors; Stability; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

Print_ISBN

0-7803-7318-9

Type

conf

DOI

10.1109/ISPSD.2002.1016197

Filename

1016197