Title :
A new analytical small-signal model of dual-gate GaAs MESFET
Author :
Ibrahim, M. ; Syrett, B. ; Bennett, J.
Author_Institution :
Carleton Univ., Ottawa, Ont., Canada
Abstract :
The development of an analytical small-signal model for the intrinsic elements of a dual gate GaAs MESFET (DGMESFET) is described. The model is based on splitting the Z-parameters of each FET part analytically without any simplifications or assumptions. The model is extracted directly from the measured three-port S-parameters. No extra measurements are required, thus reducing the lengthy procedures needed to characterize the DGMESFET. Experimental verification of the new model is presented.
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; gallium arsenide; microwave field effect transistors; semiconductor device models; DGMESFET; GaAs; Z-parameters; analytical small-signal model; dual-gate MESFET; intrinsic elements; three-port S-parameters; Analytical models; Bidirectional control; Equivalent circuits; FETs; Frequency; Gallium arsenide; Length measurement; MESFETs; Scattering parameters; Transconductance;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967126
