• DocumentCode
    1926025
  • Title

    Very low RON measured on 4H-SiC accu-MOSFET high power device

  • Author

    Nallet, F. ; Godignon, P. ; Planson, D. ; Raynaud, C. ; Chante, J.P.

  • Author_Institution
    Centre de Genie Electrique de Lyon (CEGELY), Villeurbanne, France
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    209
  • Lastpage
    212
  • Abstract
    This paper describes the I-V characteristics obtained from a 4H-SiC current limiting device. Some specific aspects of the specific on-resistance are discussed in simulation with the DESSIS ISE software. The device behavior places it in the field of the best implanted channel MOSFET (IC-MOSFET) obtained in the literature. The best on-resistance measured is 13 mΩcm2 and the saturation current density reaches 900 Acm-2.
  • Keywords
    current density; current limiters; doping profiles; electric resistance; power MOSFET; semiconductor device measurement; semiconductor device models; silicon compounds; wide band gap semiconductors; 4H-SiC accu-MOSFET high power device; 4H-SiC current limiting device; DESSIS ISE software simulation; I-V characteristics; IC-MOSFET; SiC; device behavior; implanted channel MOSFET; saturation current density; specific on-resistance; Bidirectional control; Current density; Current limiters; Diodes; Doping; Power MOSFET; Power measurement; Protection; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
  • Print_ISBN
    0-7803-7318-9
  • Type

    conf

  • DOI
    10.1109/ISPSD.2002.1016208
  • Filename
    1016208
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1926025