Title :
Power performance optimization of a new smart power IC technology targeted for 42V automotive electrical system and high-power applications
Author :
Chung, Young S. ; Zuo, Jiangkui ; Macary, Veronique ; Min, Won-Gi ; Huber, John ; Yang, Hongning ; Baird, Bob
Author_Institution :
SMARTMOS Technol. Center/Digital DNA Lab., Motorola Inc., Mesa, AZ, USA
Abstract :
High energy implantation becomes increasingly attractive for CMOS and BiCMOS technologies due to significant benefits in performance and cost. This paper reports the electrical and thermal performance of the power devices in a new cost-effective smart power technology based on the high energy implantation process. characteristics in safe operating area and transient power capability of the power devices are investigated in terms of process and geometry optimizations, compared to the conventional implantation technology.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; automotive electronics; circuit optimisation; ion implantation; power integrated circuits; 42 V; BiCMOS technologies; CMOS technologies; automotive electrical system; electrical performance; geometry optimizations; high energy implantation; high-power applications; power performance optimization; process optimizations; safe operating area; smart power IC technology; thermal performance; transient power capability; Automotive engineering; BiCMOS integrated circuits; CMOS technology; Geometry; Isolation technology; MOSFETs; Optimization; Power integrated circuits; Power system transients; Semiconductor optical amplifiers;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016211
