Title :
I3T80: a 0.35 μm based system-on-chip technology for 42 V battery automotive applications
Author :
Moens, P. ; Bolognesi, D. ; Delobel, L. ; Villanueva, D. ; Hakim, H. ; Trinh, S.C. ; Reynders, K. ; De Pestel, F. ; Lowe, A. ; De Backer, E. ; Van Herzeele, G. ; Tack, M.
Author_Institution :
Technol. Res. & Dev. Dept., Alcatel Microelectron., Oudenaarde, Belgium
Abstract :
This paper introduces a new modular 0.35 μm based smart power technology which is compatible with the new 42 V battery automotive standard. The I3T80 technology offers various types of DMOS transistors in the range between 15 to 80 V. A set of bipolars, a high voltage floating diode, a large array of passive components, floating logic up to 80 V and 4 kV HBM compatible ESD protection structures are available. In addition, embedded flash memory is offered.
Keywords :
BIMOS integrated circuits; application specific integrated circuits; automotive electronics; electrostatic discharge; flash memories; integrated memory circuits; power integrated circuits; power semiconductor diodes; protection; 0.35 micron; 15 to 80 V; 4 kV; 42 V; DMOS transistors; HBM compatible ESD protection structures; I3T80 system-on-chip technology; automotive ASIC; battery automotive applications; battery automotive standard; bipolars; embedded flash memory; floating logic; high voltage floating diode; modular smart power technology; passive components; Automotive applications; Automotive engineering; Batteries; Diodes; Electrostatic discharge; Flash memory; Logic arrays; Protection; System-on-a-chip; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016212
