A comparison of electron, proton and helium ion irradiation for the optimization of the CoolMOS™ body diode

Author

Schmitt, M. ; Schulze, H. ; Schlogl, A. ; Vosseburger, M. ; Willmeroth, A. ; Deboy, G. ; Wachutka, G.

Author_Institution

Infineon Technol. AG, Munich, Germany

fYear

2002

fDate

2002

Firstpage

229

Lastpage

232

Abstract

With a view to improving the switching speed of the internal diode, we exposed CoolMOS™ power MOSFETs as prominent representatives of the new class of charge compensation devices to irradiation by electrons, protons or helium ions for lifetime control and studied the influence of irradiation and annealing parameters on the electrical device characteristics. Our investigations show that electron irradiation provides the best overall result. The reverse recovery charge Q_rr can be reduced by a factor of 10 compared to reference devices without any significant change of the remaining electrical data of the device.

Keywords

annealing; electron beam effects; helium ions; ion beam effects; optimisation; power MOSFET; power semiconductor diodes; proton effects; semiconductor device reliability; semiconductor device testing; CoolMOS body diode optimization; CoolMOS power MOSFET; He; annealing parameters; charge compensation devices; device electrical data; electrical device characteristics; electron irradiation; helium ion irradiation; internal diode switching speed; lifetime control; proton irradiation; reference devices; reverse recovery charge; Annealing; Artificial intelligence; Diodes; Doping; Electrons; Helium; MOSFETs; Protons; Switching circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

Print_ISBN

0-7803-7318-9

Type

conf

DOI

10.1109/ISPSD.2002.1016213

Filename

1016213