24 mΩcm2 680 V silicon superjunction MOSFET

A silicon superjunction MOSFET with very low specific on-resistance, R_onA, and very low R_onQ_gd, where Q_gd is the gate-to-drain switching charge, is reported. R_onA and R_onQ_gd achieved are 24 mΩcm² and 2.0 ΩnC at the breakdown voltage of 680 V, which are the lowest among the reported values for high-voltage silicon power MOSFETs with breakdown voltage above 500 V. Numerical analysis and discussions on the design of the buried epitaxial superjunction technology are also presented.