Title :
Guard ring assisted RESURF: a new termination structure providing stable and high breakdown voltage for SiC power devices
Author :
Kinoshita, Kozo ; Hatakeyama, Tetsuo ; Takikawa, Osamu ; Yahata, Akihiro ; Shinohe, Takashi
Author_Institution :
Inf. Syst. Center, Toshiba Corp. e-Solution Co., Kawasaki, Japan
Abstract :
A new junction termination structure named guard ring assisted reduced surface field (GRA-RESURF) is proposed. The structure maintains a stable and high breakdown voltage without being influenced by the deviation of impurity dose in the RESURF layer or by parasitic charge. The GRA-RESURF structure was adopted on 600 V range 4H-SiC Schottky barrier diodes, and achieved high breakdown voltages with a good production yield.
Keywords :
Schottky diodes; doping profiles; electric charge; power semiconductor diodes; semiconductor device breakdown; semiconductor device manufacture; semiconductor device models; semiconductor device reliability; semiconductor junctions; silicon compounds; wide band gap semiconductors; 4H-SiC Schottky barrier diodes; 600 V; GRA-RESURF structure; RESURF layer impurity dose deviation; SBD; SiC; SiC power devices; diode production yield; guard ring assisted reduced surface field; high breakdown voltage; junction termination structure; parasitic charge; stable breakdown voltage; Doping; Epitaxial layers; Impurities; Information systems; Production; Research and development; Schottky barriers; Schottky diodes; Silicon carbide; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016219
