A new junction termination technique using ICP RIE for ideal breakdown voltages

Author

Park, Chanho ; Hong, NungPyo ; Kim, Deok J. ; Lee, Kwyro

Author_Institution

Fairchild Semicond. Int. Inc., Kyonggi-Do, South Korea

fYear

2002

fDate

2002

Firstpage

257

Lastpage

260

Abstract

A new junction termination technique using inductively coupled plasma (ICP) reactive ion etching (RIE) is proposed in this paper. By removing the cylindrical and spherical junctions of the planar process we have realized near ideal breakdown voltages with very compact junction termination area. Bipolar power transistors of 800 V voltage rating were fabricated to implement the proposed new junction termination technique using a test element group (TEG) pattern.

Keywords

plasma materials processing; power bipolar transistors; semiconductor device breakdown; semiconductor device manufacture; semiconductor device measurement; semiconductor device models; semiconductor junctions; sputter etching; 800 V; ICP RIE junction termination technique; TEG pattern; bipolar power transistor voltage ratings; breakdown voltage; compact junction termination area; cylindrical junctions; inductively coupled plasma reactive ion etching; planar process; reactive ion etcher; spherical junctions; test element group pattern; Breakdown voltage; Etching; Fabrication; Nuclear and plasma sciences; Plasma applications; Plasma devices; Plasma materials processing; Power transistors; Silicon; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

Print_ISBN

0-7803-7318-9

Type

conf

DOI

10.1109/ISPSD.2002.1016220

Filename

1016220