Drain profile engineering of RESURF LDMOS devices for ESD ruggedness

This paper reports a novel 50 V lateral power MOSFET structure that is self-protecting with respect to electrostatic discharge (ESD) strikes. This device features a double RESURF technique in conjunction with a deep drain engineered profile which eliminates soft leakage degradation after snapback, thus demonstrating immunity to filamentation. Maximum second breakdown current (I_t2) of 16 mA/μm has been realized in a 100 ns transmission line pulse (TLP) measurement even with a higher holding voltage of 20 V. ESD protection level in excess of 5 kV with an equivalent human body model (HBM) has been shown to be feasible for medium sized devices without significant compromise in device performance.