Investigation on the short-circuit capability of 1200 V trench gate field-stop IGBTs

Author

Otsuki, M. ; Onozawa, Y. ; Kirisawa, M. ; Kanemaru, H. ; Yoshihara, K. ; Seki, Y.

Author_Institution

Matsumoto Factory, Fuji Electr. Co. Ltd., Nagano, Japan

fYear

2002

fDate

2002

Firstpage

281

Lastpage

284

Abstract

The short circuit failure mechanism of newly developed 1200 V/150 A trench gate field-stop IGBT has been investigated. The devices mainly fail after a few hundred microseconds of the short-circuit turn-off. It has been found that the leakage current due to extreme temperature rise in the backside layers results in thermal runaway during off-state. The device with improved backside layer achieved more than 15 μs of short circuit capability while keeping the low on-state voltage drop of 1.55 V.

Keywords

failure analysis; insulated gate bipolar transistors; leakage currents; power bipolar transistors; semiconductor device reliability; semiconductor device testing; 1.55 V; 1200 V; 15 mus; 150 A; backside layers; extreme temperature rise; leakage current; off-state thermal runaway; on-state voltage drop; short circuit failure mechanism; short-circuit capability; short-circuit turn-off; trench gate field-stop IGBT; Circuits; Current density; Failure analysis; Insulated gate bipolar transistors; Leakage current; Low voltage; Production facilities; Pulse measurements; Research and development; Steady-state;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

Print_ISBN

0-7803-7318-9

Type

conf

DOI

10.1109/ISPSD.2002.1016226

Filename

1016226