DocumentCode :
1926574
Title :
Lateral 10-15 V DMOST with very low 6 mohm.mm2 on-resistance
Author :
Ludikhuize, Adriaan W.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
fYear :
2002
fDate :
2002
Firstpage :
301
Lastpage :
304
Abstract :
The paper reports a novel low-ohmic 6 mΩ.mm2 LDMOS transistor with breakdown voltage of 15 V, above 10 V full operational voltage and Ron*Qgd (10 Vds)=11 mΩ.nC, integrated in a 0.6 μm BCD IC process and suitable for power DC-DC converters from a 5-10 V supply.
Keywords :
BIMOS integrated circuits; DC-DC power convertors; MOSFET; electric resistance; semiconductor device breakdown; 0.6 micron; 10 to 15 V; 5 to 10 V; BCD IC process integration; LDMOS transistor; breakdown voltage; lateral DMOST; on-resistance; operational voltage; power DC-DC converters; Breakdown voltage; DC-DC power converters; Electric breakdown; Epitaxial layers; Implants; Lithography; MOS devices; Rectifiers; Semiconductor optical amplifiers; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
Type :
conf
DOI :
10.1109/ISPSD.2002.1016231
Filename :
1016231
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1926574
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