Preparation of ferroelectric capacitor films onto the releasable substrate and its application to nano-transfer method

Author

Ichiki, Masaaki ; Iimura, Keita ; Hosono, Toshifumi ; Kuroki, Keisuke ; Tomioka, Fumiaki ; Suga, Tadatomo ; Maeda, Ryutaro ; Itoh, Toshihiro

Author_Institution

Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan

fYear

2010

fDate

24-26 Aug. 2010

Firstpage

1

Lastpage

3

Abstract

High dielectric capacitor, that has around 1000 in dielectric constant, can be successfully formed by nanotransfer on non-heat-resisting substrates. PZT film could be released from the Si substrate and bonded onto the polymer one. The releasing characteristics have the relationships with the thickness of Pt layer. The formed PZT has perovskite structure and clear columnar texture. The proposal of the structure of electrode using Ti is shown in case of the stress film.

Keywords

ferroelectric capacitors; lead compounds; nanotechnology; permittivity; titanium compounds; zirconium compounds; PZT; Si; clear columnar texture; dielectric constant; electrode structure; ferroelectric capacitor film preparation; high dielectric capacitor; nanotransfer method; nonheat-resisting substrates; perovskite structure; releasable substrate; stress film; Capacitors; Dielectric constant; Electrodes; Films; Polymers; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

CPMT Symposium Japan, 2010 IEEE

Conference_Location

Tokyo

Print_ISBN

978-1-4244-7593-3

Type

conf

DOI

10.1109/CPMTSYMPJ.2010.5679658

Filename

5679658