DocumentCode
1926618
Title
High density substrate solution for complex high pin count flip-chip applications
Author
Solberg, Vern ; Oganesian, Vage
Author_Institution
STC-Madison, Madison, WI, USA
fYear
2010
fDate
24-26 Aug. 2010
Firstpage
1
Lastpage
4
Abstract
There are a number of factors to consider when selecting an optimal semiconductor package configuration for the newer generations of high density controllers and processors; I/O requirement, package footprint, form factor, thermal dissipation, electrical performance, and cost. The more advanced microprocessor and ASIC semiconductor packaging currently require several thousand I/O contacts and they are expected to expand contact I/O by 30% in the very near future. This paper will detail the development of a unique raised contact substrate fabrication process that enables semiconductor developers to significantly reduce the contact pitch on the die without reducing pad size. The flip-chip to substrate assembly process yield is significantly higher as well because the conventional solder bumped die can be placed directly onto the raised contact features (eliminating the need for solder printing on the package substrate). Mounting the bumped die element on this planer topography solves fundamental issues associated with electro-migration and it avoids many of the current assembly process related defects. This is because the solid copper contact profile furnishes a consistent standoff height that enables a uniform and void free package interconnect as well as improving underfill flow control (even with low temperature solders).
Keywords
flip-chip devices; microprocessor chips; semiconductor device packaging; substrates; ASIC semiconductor packaging; I/O requirement; complex high pin count flip-chip applications; electrical performance; form factor; microprocessor; optimal semiconductor package configuratio; package footprint; thermal dissipation; Arrays; Assembly; Copper; Fatigue; Solids; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
CPMT Symposium Japan, 2010 IEEE
Conference_Location
Tokyo
Print_ISBN
978-1-4244-7593-3
Type
conf
DOI
10.1109/CPMTSYMPJ.2010.5679659
Filename
5679659
Link To Document