Title :
Solid-state high power RF oscillator
Author :
Gitsevich, A. ; Kirkpatrick, D. ; Dymond, L., Jr.
Author_Institution :
Fusion Lighting Inc., Rockville, MD, USA
Abstract :
A new kind of RF solid-state oscillator design is observed. The oscillator has two feedback loops, which provide a safe working condition for the power transistor at high levels of RF output power. The oscillator uses a high power LDMOS transistor, which provides output power greater than 65 W and efficiency better than 65% at the operating frequency of 915 MHz. The oscillator is designed using microstrip lines and lumped components on Rogers R03010/sup TM/ substrate.
Keywords :
MOSFET circuits; UHF field effect transistors; UHF oscillators; feedback oscillators; power MOSFET; 65 W; 65 percent; 915 MHz; Rogers R03010 substrate; feedback loop; lumped component; microstrip line; power LDMOS transistor; solid-state high-power RF oscillator; Feedback loop; Impedance matching; Microwave oscillators; Microwave transistors; Power amplifiers; Power generation; Power transistors; Radio frequency; Solid state circuits; Solid state lighting;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967169
