Junction field effect transistors as radiation detectors

Author

Lund, J.C. ; Olschner, F.

Author_Institution

Radiat. Monitoring Devices, Inc., Watertown, MA, USA

fYear

1992

fDate

25-31 Oct 1992

Firstpage

47

Abstract

The use of junction field effect transistors (JFETs) as radiation detectors is described. Measurements of the energy resolution of n-channel JFETs operated as X-ray spectrometers are presented. An energy resolution of 210 eV FWHM at 5.9 keV was obtained at room temperature using a commercially available JFET as a detector. An analysis of the behavior of JFETs as X-ray spectrometers is presented together with suggestions on designing future devices specifically for use as radiation detectors. It is concluded that detectors approaching the performance of cooled Si(Li) detectors but capable of operating at room temperature could be made from JFETs

Keywords

X-ray spectrometers; junction gate field effect transistors; semiconductor counters; 210 eV; 293 K; 5.9 eV; JFETs; X-ray spectrometers; energy resolution; junction field effect transistors; n-channel; radiation detectors; Capacitance; Energy resolution; FETs; JFETs; Noise measurement; Preamplifiers; Pulse amplifiers; Radiation detectors; Semiconductor radiation detectors; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-0884-0

Type

conf

DOI

10.1109/NSSMIC.1992.301183

Filename

301183