Potential and electric field model for 18 nm SG tunnel field effect transistor

Author

Arun Samuel, T.S. ; Balamurugan, N.B.

Author_Institution

Thiagarajar Coll. of Eng., Madurai, India

fYear

2013

fDate

7-9 Jan. 2013

Firstpage

1

Lastpage

4

Abstract

In this paper, a new two dimensional (2D) analytical model of the single gate (SG) silicon-on-insulator (SOI) tunnel field effect transistors (TFETs) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. Analytical expressions for surface potential and electric field are derived. The validity of the proposed model is tested for device scaled to 18-nm length and the analytical results are compared with TCAD simulations.

Keywords

Poisson equation; field effect transistors; semiconductor device models; silicon-on-insulator; technology CAD (electronics); tunnel transistors; 2D Poisson equation; 2D analytical model; SG SOI tunnel field effect transistor; TCAD simulations; boundary condition; electric field model; parabolic approximation technique; single-gate silicon-on-insulator TFET; size 18 nm; surface potential model; two-dimensional analytical model; Analytical models; Educational institutions; Mathematical model; Silicon; Tunneling; Analytical modeling; Band to band tunneling (BTBT); Poisson´s equations; Surface potential;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT), 2013 International Conference on

Conference_Location

Tiruvannamalai

Print_ISBN

978-1-4673-5300-7

Type

conf

DOI

10.1109/ICEVENT.2013.6496580

Filename

6496580