DocumentCode
1926898
Title
Modeling and analysis of differential signal Through Silicon Via (TSV) in 3D IC
Author
Kim, Joohee ; Pak, Jun So ; Cho, Jonghyun ; Lee, Junho ; Lee, Hyungdong ; Park, Kunwoo ; Kim, Joungho
Author_Institution
KAIST, Daejeon, South Korea
fYear
2010
fDate
24-26 Aug. 2010
Firstpage
1
Lastpage
4
Abstract
For the higher bandwidth and the smaller form factor, high-speed I/O channel design in 3D IC becomes more important. To analyze the differential signaling method with the TSV (Through Silicon Via) in 3D IC, we propose the high-frequency scalable model for the differential signal TSV. With the proposed model, the electrical behavior of the differential signal TSV is analyzed and compared to that of a single-ended signal TSV in various point of views.
Keywords
integrated circuit design; 3-dimensional integrated circuit; 3D IC; differential signal TSV; differential signal through silicon via; high-frequency scalable model; high-speed I-O channel design; single-ended signal TSV; Equations; Mathematical model; Silicon; Solid modeling; Substrates; Three dimensional displays; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
CPMT Symposium Japan, 2010 IEEE
Conference_Location
Tokyo
Print_ISBN
978-1-4244-7593-3
Type
conf
DOI
10.1109/CPMTSYMPJ.2010.5679671
Filename
5679671
Link To Document