A real-time thermal model for monitoring of power semiconductor devices

Author

Gachovska, Tanya Kirilova ; Bo Tian ; Hudgins, Jerry ; Wei Qiao ; Donlon, John

Author_Institution

Electr. Eng. Dept., Univ. of Nebraska - Lincoln, Lincoln, NE, USA

fYear

2013

fDate

15-19 Sept. 2013

Firstpage

2208

Lastpage

2213

Abstract

A RC thermal network with temperature dependent thermal conductivities and heat capacitances is used to calculate the junction temperature of IGBT in a device model realized in Simulink. The collector current, I_C, collector-emitter voltage, V_CE, and the case temperature, T_C, measured during the cycling, are used as input parameters of the Simulink model. The model is compared with a constant thermal conductivity and heat capacitance model (RC network) and verified experimentally using a thermo-sensitive electrical parameter method. Including the temperature dependent parameters results in an improvement of accuracy for determining the junction temperature compare to the model with constant thermal conductivity and heat capacitance.

Keywords

insulated gate bipolar transistors; power bipolar transistors; semiconductor device measurement; semiconductor device models; thermal conductivity; IGBT junction temperature; RC thermal network; Simulink model; and heat capacitance model; case temperature; collector-emitter voltage; constant thermal conductivity; power semiconductor device monitoring; real-time thermal model; temperature dependent thermal conductivity; thermosensitive electrical parameter method; Conductivity; Heating; Insulated gate bipolar transistors; Junctions; Temperature measurement; Thermal conductivity; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2013 IEEE

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/ECCE.2013.6646980

Filename

6646980